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Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Simeng E. Zhao,Stefano Bonaldo,Pan Wang,Rong Jiang,Huiqi Gong,En Xia Zhang,Niamh Waldron,Bernardette Kunert,Jerome Mitard,Nadine Collaert,Sonja Sioncke,Dimitri Linten,Ronald D. Schrimpf,Robert A. Reed,Simone Gerardin,Alessandro Paccagnella,Daniel M. Fleetwood

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2019）

Cited 29|Views87

Key words

1/f noise,III-V,border trap,bulk Si,FinFETs,gate-length dependence,InGaAs,total ionizing dose (TID)

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