First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized Using Multi-epitaxial Growth Method
2018 IEEE International Electron Devices Meeting (IEDM)（2018）
关键词
dynamic characteristics,SiC superjunction MOSFET,multiepitaxial growth method,product level device,switching characteristics,Schottky barrier diode,reverse recovery characteristics,high short circuit capability,minority carrier,drain-source capacitance,class superjunction UMOSFET,SiC
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