MRAM As Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology

O. Golonzka,J. -G. Alzate,U. Arslan,M. Bohr,P. Bai,J. Brockman, B. Buford,C. Connor,N. Das,B. Doyle,T. Ghani,F. Hamzaoglu,P. Heil,P. Hentges,R. Jahan,D. Kencke, B. Lin, M. Lu, M. Mainuddin, M. Meterelliyoz,P. Nguyen,D. Nikonov, K. O'brien,J. ODonnell,K. Oguz,D. Ouellette,J. Park, J. Pellegren,C. Puls,P. Quintero,T. Rahman, A. Romang,M. Sekhar, A. Selarka,M. Seth,A. J. Smith, A. K. Smith,L. Wei,C. Wiegand, Z. Zhang,K. Fischer

2018 IEEE International Electron Devices Meeting (IEDM)（2018）

引用 140|浏览26

关键词

nonvolatile memory solution,RF applications,mobile applications,ultra low power FinFET technology,Intel 22FFL technology,MRAM-based nonvolatile memory,22FFL FinFET technology,key integration features,device-level MTJ characteristics,embedded NVM technology

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