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28 Nm FDSOI Analog and RF Figures of Merit at N2 Cryogenic Temperatures

B. Kazemi Esfeh,N. Planes,M. Haond,J-P Raskin,D. Flandre,V Kilchytska

Solid-State Electronics（2019）

Cited 25|Views57
Key words
FDSOI,UTBB MOSFETs,Analog and RF Figures of Merit (FoM),Cryogenic temperature,Mobility,Series resistance
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