The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond
2019 Symposium on VLSI Circuits（2019）
Key words
gate dielectric-fuse,5G era,IoT era,FinFET,environmental temperature,one time programming memory,high-k metal-gate CMOS generations,dielectric fuse breakdown,foundry pure logic HKMG CMOS platform,dFuse macro,high programming speed,data retention,OTP memory,automotive applications,program voltage,embedded applications,voltage 0.75 V,temperature 150.0 degC,size 28.0 nm,time 100.0 ns,voltage 4.0 V,storage capacity 4 Kbit
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