Antiferromagnetic Skyrmion-Based Logic Gates Controlled by Electric Currents and Fields

Antiferromagnets are promising materials for future spintronic applicationsdue to their unique properties including zero stray fields, robustness versusexternal magnetic fields and ultrafast dynamics, which have attracted extensiveinterest in recent years. In this work, we investigate the dynamics of isolatedskyrmions in an antiferromagnetic nanotrack with a voltage-gated region. It isfound that the skyrmion can be jointly controlled by the driving current andthe voltage-controlled magnetic anisotropy gradient. We further propose adesign of logic computing gates based on the manipulation of antiferromagneticskyrmions, which is numerically realized combining several interactions andphenomena, including the spin Hall effect, voltage-controlled magneticanisotropy effect, skyrmion-skyrmion interaction, and skyrmion-edgeinteraction. The proposed logic gates can perform the basic Boolean operationsof the logic AND, OR, NOT, NAND and NOR gates. Our results may have a greatimpact on fundamental physics, and be useful for designing future non-volatilelogic computing devices with ultra-low energy consumption and ultra-highstorage density.