Breaking the Theoretical Limit of 6.5 Kv-Class 4H-Sic Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)（2019）
关键词
trench-filling epitaxial growth,super-junction device,trade-off relationship,breakdown voltage,multiepitaxial growth method,implantation,SiC material,high-voltage devices,high-aspect-ratio SJ structure,SJ MOSFET,SiC MOSFET,4H-SiC super-junction MOSFET,specific on-resistance,critical fabrication process,n-type drift layer,voltage 7.8 kV,voltage 6.5 kV,SiC
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