Non-Volatile RRAM Embedded into 22FFL FinFET Technology

O. Golonzka,U. Arslan,P. Bai,M. Bohr,O. Baykan,Y. Chang, A. Chaudhari,A. Chen,J. Clarke,C. Connor,N. Das, C. English,T. Ghani,F. Hamzaoglu,P. Hentges,P. Jain,C. Jezewski,I Karpov,H. Kothari,R. Kotlyar, B. Lin,M. Metz, J. Odonnell,D. Ouellette,J. Park, A. Pirkle,P. Quintero,D. Seghete,M. Sekhar,A. Sen Gupta,M. Seth,N. Strutt,C. Wiegand,H. J. Yoo,K. Fischer

2019 SYMPOSIUM ON VLSI TECHNOLOGY（2019）

Cited 64|Views25

Key words

RRAM-based nonvolatile memory,ultra low power technology,mobile RF applications,embedded RRAM technology,high die yield,retention properties,FinFET Technology,nonvolatile RRAM,temperature 85.0 degC

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