Correlation Between Electromigration-Related Void Volumes and Time-to-Failure by High Resolution X-Ray Tomography and Modeling
IEEE Electron Device Letters（2019）
Key words
Bonding,Resistance,Correlation,Electromigration,Imaging,X-ray tomography,Failure analysis,Hybrid bonding-based integration,interconnect,electromigration (EM),void volume,time-to-failure,reliability,failure analysis,synchrotron,X-ray nano-tomography,finite element modeling (FEM)
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