RF Performance of a Fully Integrated 3D Sequential Technology
International Electron Devices Meeting（2019）
Key words
electrical factors,low temperature PMOS,top tier transistors,top tier PMOS,fully integrated CMOS 3D sequential integration technology,bottom tier devices,low temperature process,RF FOM,gate resistance,RF Figure-Of-Merits,3DSI,RF performance,frequency 80.0 GHz,size 30.0 nm,voltage 1.0 V,frequency 102.0 GHz,frequency 170.0 GHz,temperature 630.0 degC,frequency 55.0 GHz
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