The Effects of Valence Band Offset on Threshold Voltage Shift in A-Ingazno TFTs under Negative Bias Illumination Stress
IEEE Electron Device Letters（2020）
Key words
Logic gates,Dielectrics,Thin film transistors,Dielectric measurement,Stress,Hafnium compounds,Aluminum oxide,NBIS,gate dielectric,DOS,valence band offset (VBO),IGZO
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