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Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 Nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure

Semiconductors(2020)

引用 5|浏览13
关键词
laser thyristor,current localization,AlGaAs/GaAs,impact ionization,transport in heterostructures
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