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Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology

O. Aydin,J. R. Holt,C. Le Royer,L. Vanamurthy,T. Feudel,T. Heyne,R. Gerber,M. Lenski,S. Jansen,D. Utess,C. Klein,A. Peeva,G. R. Mulfinger,T. J. Mcardle,D. Barge,A. Divay,S. Lehmann,E. Smith,C. Peters,J. U. Sachse

SIGE, GE, AND RELATED COMPOUNDS MATERIALS, PROCESSING, AND DEVICES 8（2018）

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