Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments
IEEE Transactions on Electron Devices（2021）
关键词
Switches,Hafnium oxide,Hafnium,Voltage measurement,Performance evaluation,Plasma measurements,Oxidation,Hafnium oxide (HfO₂,oxide plasma treatment,resistive random access memory (RRAM),supercritical fluid
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