Tunnel FET Negative-Differential-Resistance Based 1T1C Refresh-Free-DRAM, 2T1C SRAM and 3T1C CAM
IEEE Transactions on Nanotechnology（2021）
Key words
TFETs,Random access memory,Capacitors,Logic gates,Throughput,Capacitance,Doping,Tunnel FET,DRAM,eDRAM,metal-insulator-metal (MIM) capacitors,SRAM,CAM,CPU,GPU
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