Optimization of Surface Passivation for Suppressing Leakage Current in GaSb PIN Devices
Electronics Letters（2020）
关键词
passivation,atomic layer deposition,III-V semiconductors,leakage currents,gallium compounds,aluminium compounds,p-i-n diodes,optoelectronic devices,leakage current suppression,optoelectronic devices,sulfur passivation parameters,competing processes,sulfur passivation process,atomic layer deposition,surface resistivity,p-i-n structure,repeatable passivation approach,stable passivation approach,optoelectronic performance,p-i-n devices,surface passivation optimization,re-oxidation,subsequent encapsulation,temperature 293,0 K to 298,0 K,GaSb,Al2O3
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