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Study on the Difference Between ID(VG) and C(VG) Pbti Shifts in GaN-on-Si E-mode MOSc-HEMT

A. G. Viey,W. Vandendaele,M-A Jaud,J. Coignus,J. Cluzel,A. Krakovinsky,S. Martin,J. Biscarrat,R. Gwoziecki,V Sousa,F. Gaillard,R. Modica,F. Iucolano,M. Meneghini,G. Meneghesso,G. Ghibaudo

2021 IEEE International Reliability Physics Symposium (IRPS)（2021）

引用 8|浏览16
关键词
GaN-on-Si E-mode MOSc-HEMT,BTI reliability,DC pBTI
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