Novel Concept of Hardware Security in Using Gate-switching FinFET Nonvolatile Memory to Implement True-Random-Number Generator
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2020）
关键词
resistive-gate,metal-insulator-metal,novolatile memory,RG-FinFET,read time,array-level performance,TRNG,drain current variation,embedded FinFET technology,hardware security,gate-switching FinFET nonvolatile memory,True-random-number generator,gate-switching resistance memory,random number generator
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