First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis Towards Sub-10nm Node
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2020）
关键词
programing voltage,array architecture,design rule,cell size,product-level stability requirement,deep N well,negative bias scheme,stability factors,oxide based resistive random access memory,FinFET platform,scaling potential analysis,OxRRAM integration,size 5.0 nm,size 14.0 nm
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