Stacked Gate-All-Around Nanosheet Pfet with Highly Compressive Strained Si1-xGex Channel
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2020）
关键词
Si1-xGex NS channel device characteristics,highly compressive strained Si1-xGex channel,Si1-xGex NS channel structure,high crystalline quality,Stacked Gate-All-Around nanosheet pFETs,corresponding channel resistance reduction,Si cap thickness,Ge fraction,pressure 1.0 GPa,Si1-xGex
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