High-Density 3D Monolithically Integrated Multiple 1T1R Multi-Level-Cell for Neural Networks

E. Esmanhotto,L. Brunet,N. Castellani, D. Bonnet,T. Dalgaty,L. Grenouillet,D. R. B. Ly,C. Cagli,C. Vizioz,N. Allouti,F. Laulagnet, O. Gully, N. Bernard-Henriques,M. Bocquet,G. Molas,P. Vivet,D. Querlioz,J. M. Portal,S. Mitra,F. Andrieu,C. Fenouillet-Beranger,E. Nowak,E. Vianello

international electron devices meeting（2020）

Cited 39|Views25

Key words

3D monolithically integrated multiple 1T1R Resistive RAM structure,RRAM,MultiLevel Cell programming,conductance relaxation effect,Neural Network,distinct conductance levels,high-density 3D monolithically integrated multiple 1T1R multi-level-cell

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined