AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Shuang Liu,Weihang Zhang,Jincheng Zhang,Xiufeng Song,Yinhe Wu,Dazheng Chen,Shengrui Xu,Shenglei Zhao,Yue Hao

IEEE Transactions on Electron Devices（2021）

引用 23|浏览19

关键词

HEMTs,MODFETs,Substrates,Wide band gap semiconductors,Aluminum gallium nitride,Logic gates,Silicon,AlN,GaN superlattice (SL) channel,electron mobility,high-electron-mobility transistors (HEMTs),silicon substrate,trap states

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