Effect of Random Dopant Fluctuation on Data Retention Time Distribution in DRAM
IEEE Transactions on Electron Devices（2021）
Key words
Resource description framework,Leakage currents,Random access memory,Semiconductor process modeling,Green's function methods,Analytical models,Data models,Data retention time,dynamic random access memory (DRAM),Green's function method,random dopant fluctuation (RDF),TCAD simulation
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