Surface Ga-Boosted Boron-Doped Si0.5 Ge0.5 Using In-Situ CVD Epitaxy: Achieving 1.1 × 1021 Cm−3 Active Doping Concentration and 5.7× 10−10 Ω-cm2 Contact Resistivity
2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2020）
Key words
contact resistivity,in-situ doping concentration,in-situ CVD epitaxial growth,reduced pressure chemical vapour deposition,ladder transmission line model,semiconductor epitaxial layers,surface gallium boosted boron doping,semiconductor-metal contact,temperature 450.0 degC,Si0.5Ge0.5:Ga-B,Ti-Si0.5Ge0.5
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