Activation of Si Implants into Inas Characterized by Raman ScatteringA. G. Lind,T. P. Martin,V. C. Sorg,E. L. Kennon,V. Q. Truong,H. L. Aldridge,C. Hatem,M. O. Thompson,K. S. JonesJOURNAL OF APPLIED PHYSICS（2016）引用 4|浏览2AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
