Chrome Extension
WeChat Mini Program
Use on ChatGLM
VIPCreated with Sketch.

Design Study of Gate-All-around Vertically Stacked Nanosheet FETs for Sub-7Nm Nodes

Mohapatra E.,Dash T. P.,Jena J.,Das S.,Maiti C. K.

SN Applied Sciences（2021）

Cited 20|Views5
Key words
Stacked nanosheet FETs,Gate-all-around (GAA),Random discrete dopants (RDD),Source/drain extension,Metal gate granularity (MGG),Variability
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined