Design and Analysis of P-GaN/N-Ga₂O₃ Based Junction Barrier Schottky Diodes
IEEE Transactions on Electron Devices（2021）
Key words
Electric breakdown,Schottky diodes,Gallium nitride,Computational modeling,Switches,Silicon carbide,Semiconductor process modeling,Gallium oxide,GaN,junction barrier Schottky diode,Schottky diode,technology computer-aided design (TCAD),transient analysis
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