Simulation Research on Single Event Burnout Performances of P-Gan Gate HEMTs with 2DEG Al X Ga1-x N Channel

Shuang Liu,Jincheng Zhang,Shenglei Zhao,Lei Shu,Xiufeng Song,Xuexue Qin,Yinhe Wu,Weihang Zhang,Tongde Li,Liang Wang,Zhihong Liu,Yuanfu Zhao,Yue Hao

IEEE TRANSACTIONS ON ELECTRON DEVICES（2022）

引用 16|浏览14

关键词

MODFETs,HEMTs,Wide band gap semiconductors,Aluminum gallium nitride,Logic gates,Electric breakdown,Gallium,AlGaN channel,electric field (E-field),p-GaN gate high electron mobility transistors (HEMTs),radiation,single event burnout (SEB)

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