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18Nm FDSOI Technology Platform Embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications

Doohong Min, Jinha Park,Olivier Weber,Francois Wacquant,Alexandre Villaret,Eric Vandenbossche,Franck Arnaud,Emilie Bernard, Salim Elghouli, Christian Boccaccio,Laurent Favennec,Roberto Gonella, Jean Galvier,Jiyoung Yun,Jinwoo Park,Minuk Lee, Pyeongjun Yoon,Ilmin Lee, Heaseok Seo, Hoonsung Choi, Changbong Oh,Jinseok Kang,Sewan Park,Hyunjong Lee,Youngju Choi, Inwhan Kim, Joohyun Jo, Yoonsoo Park, Jinchan Park, Youngja Lee, Jinhyeok Jung, Juwon Lee, Hana Jang,Jihun Kang, Jisoo Kwon,Joochan Kim,Shigenobu Maeda,Youngki Hong

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

Cited 16|Views17
Key words
Performance evaluation,Industries,Phased arrays,Phase change materials,Nonvolatile memory,Random access memory,Silicon-on-insulator
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