Oxygen Atom Ordering on SiO2/4H-SiC {0001} Polar Interfaces Formed by Wet OxidationMitsuhiro Saito,Hongping Li,Kazutoshi Inoue,Hirofumi Matsuhata,Yuichi IkuharaACTA MATERIALIA（2021）引用 8|浏览21关键词4H-SiC,SiO2,Interface,STEM,Molecular dynamics calculationAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
