Ultrasensitive Self-Powered Deep-Ultraviolet Photodetector Based on in Situ Epitaxial Ga₂O₃/Bi₂Se₃ Heterojunction
IEEE Transactions on Electron Devices（2022）
Key words
Deep-ultraviolet photodetector (DUV PD),Ga2O3/Bi2Se3 heterojunction,molecular beam epitaxy (MBE),thin film
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