Design of High Speed, Energy, and Area Efficient Spin-Based Hybrid MTJ/CMOS and CMOS Only Approximate Adders
IEEE Transactions on Magnetics（2022）
Key words
Magnetic tunneling,Adders,Switches,Saturation magnetization,Voltage,Perpendicular magnetic anisotropy,Nonvolatile memory,Approximate full adder,CMOS,feature size,magnetic tunnel junction (MTJ),spintronics
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