Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED
IEEE PHOTONICS JOURNAL(2022)
关键词
Heterojunctions, Wide band gap semiconductors, Aluminum gallium nitride, Photonic band gap, Substrates, Aluminum nitride, III-V semiconductor materials, AlGaN-based UV LED, electron blocking, hole injection, indium aluminum nitride, last quantum barrier, polarization
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