Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

Z. Mutlu,Y. Lin,G. B. Barin,Z. Zhang,G. Pitner, S. Wang, R. Darawish,M. Di Giovannantonio, H. Wang,J. Cai,M. Passlack,C. H. Diaz,A. Narita,K. Muellen,F. R. Fischer,P. Bandaru,A. C. Kummel,P. Ruffieux,R. Fasel,J. Bokor

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2021）

引用 7|浏览1

关键词

9-atom armchair GNRs,9-AGNRs,short channel back-gate,top-gate dielectric bilayers,GNR,short-channel double-gate FETs,atomically precise graphene nanoribbons,high performance graphene nanoribbon transistors,high-k dielectrics,size 5.5 nm,size 2.5 nm,size 1.0 nm to 1.25 nm,HfO2,Al2O3

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要