Critical Elements for Next Generation High Performance Computing Nanosheet Technology

R. Bao,C. Durfee,J. Zhang,L. Qin,J. Rozen, H. Zhou, J. Li,S. Mukesh,S. Pancharatnam,K. Zhao, C. D. Adams,E. Leobandung,V Narayanan,D. Guo,H. Bu

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

引用 15|浏览2

关键词

critical elements,next generation high performance computing Nanosheet technology,SiGe channel,Si channel,reduced threshold voltage,negative bias temperature instability,volumeless multiVt,metal multiVt,ultra-thin nFET work function metal,device performance improvement,size 9.0 nm,SiGe

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