Interaction of Defects with Solar Irradiation for Devices Used ZnO/Ga2O3 Heterojunctions in Which Ga2O3 Prepared Using Oxidation of the Heavily Doped P-Type GaAs
CHINESE JOURNAL OF PHYSICS（2022）
关键词
Solar irradiation,photoluminescence spectroscopy,defects,optoelectronic properties,ZnO,Ga2O3
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