Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
IEEE ELECTRON DEVICE LETTERS（2022）
Key words
MODFETs,HEMTs,Indium phosphide,III-V semiconductor materials,Cryogenics,Logic gates,Epitaxial growth,Cryogenic,InP HEMT,low-noise amplifier,noise,spacer thickness
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