硅基Ⅳ族SiGeSn三元合金晶格结构、电子结构和光学性质的第一性原理
Journal of Synthetic Crystals(2021)
北京信息科技大学
Abstract
SiGeSn三元合金由于具有较二元合金更大的晶格和能带性质调控范围,是当前用于制作硅基激光器的热点材料.为全面且精确地研究其晶格结构、电子结构和光学性质,本文采用基于密度泛函理论(DFT)的第一性原理方法,并结合准随机近似和杂化泛函带隙修正,首先研究SiGeSn晶格常数及其弯曲系数的变化规律,并给出了解决GeSn二元晶格失配和压应变问题的方案.其次比较研究了SiGeSn与GeSn合金的能带结构,并通过态密度计算分析了Si的引入对合金带隙变化的物理机制.最后比较研究了SiGeSn与GeSn合金的介电函数谱、吸收系数、消光系数、反射率、折射率和发射率等光学性质.结果表明,SiGeSn晶格常数弯曲系数的变化与合金电负性差值的变化规律一致,Si-p电子态是SiGeSn合金带隙变化的最主要贡献.相比于同Sn浓度的GeSn合金,SiGeSn能保持直接带隙特征,且其带隙值和光吸收波长呈现更宽的变化范围.因此在拓宽硅基高效光源和光电探测器应用波段方面,SiGeSn相较于GeSn合金具有更大的应用潜力和优势.
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