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Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory

Sunghyun Yoon, Sung-In Hong, Garam Choi, Daehyun Kim, Ildo Kim,Seok Min Jeon,Changhan Kim,Kyunghoon Min

2022 IEEE International Memory Workshop (IMW)(2022)

Cited 13|Views3
Key words
3D NAND,Ferroelectric,scalable
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