Gate-Tunable Resonant Tunneling in a Dual-Gated Twist-Controlled Double Monolayer Graphene-hBN Heterostructure
2022 Device Research Conference (DRC)（2022）
关键词
double WSe2,dual-gated double monolayer graphene-hBN heterostructures,gate-tunable NDR,gate-tunable resonant tunneling,dual-gated twist-controlled double monolayer graphene-hBN,van der Waals heterostructures,two-dimensional crystals,device applications,emerging device,interlayer resonant tunneling field-effect transistor,tunnel barrier,gate-tunable negative differential resistance,dual-gated double bilayer graphene,WSe2 [6]
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