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Control of Silicon Dioxide Etching Rate in Hydrogen Microwave Plasma by Addition of Oxygen

V. Yu. Yurov,A. P. Bolshakov,I. A. Fedorova,A. F. Popovich,K. N. Zyablyuk,A. S. Altakhov,D. N. Sovyk,P. A. Pivovarov,P. V. Volkov,V. G. Ralchenko

APPLIED SURFACE SCIENCE（2023）

Cited 5|Views18
Key words
Silica,Microwave plasma,Etching,Hydrogen,Surface roughness,Optical emission spectroscopy
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