Methodology for Active Junction Profile Extraction in Thin Film FD-SOI Enabling Performance Driver Identification in 500°C Devices for 3D Sequential Integration.
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）
Key words
performance driver identification,thin film FDSOI devices,active dopant profile,active junction profile extraction,dynamic performance penalty,negligible dopant diffusion,scaled SiCO spacer,device performance improvement,active profile extraction,LT device,thermal activation,activation level,offset spacer,chemical dopant introduction,3D sequential integration,temperature 500.0 degC,size 5.5 nm,SiCO
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