On the Universality of Drain-Induced-barrier-lowering in Field-Effect TransistorsSu-Min Choi,Hyeon-Bhin Jo,Do-Young Yun,Jun-Gyu Kim,Wan-Soo Park,Ji-Min Baek,In-Geun Lee,Jang-Kyoo Shin,Hyuk-Min Kwon,Takuya Tsutsumi,Hiroki Sugiyama,Hideaki Matsuzaki,Jae-Hak Lee,Dae-Hyun Kim2022 International Electron Devices Meeting (IEDM)（2022）引用 1|浏览16AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
