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A Ge-Channel Ferroelectric Field Effect Transistor with Logic-Compatible Write Voltage

Dipjyoti Das,Prasanna Venkatesan Ravindran,Chinsung Park,Nujhat Tasneem,Zheng Wang,Hang Chen,Winston Chern,Shimeng Yu,Suman Datta,Asif Khan

IEEE ELECTRON DEVICE LETTERS（2023）

Cited 7|Views56
Key words
Ge-channel,FEOL,FEFETs,write voltage,memory window,endurance,retention,read-after-write
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