Germanium Nanosheet-FETs Scaled to Subnanometer Node Utilizing Monolithically Integrated Lattice Matched Ge/AlAs and Strained Ge/InGaAs
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
关键词
Germanium,Silicon,Logic gates,Lattices,FinFETs,Tensile strain,Performance evaluation,CMOS,Ge,III-V,Ge nanosheet (NS),low power,molecular beam epitaxy (MBE),N0,N5,N2,N1,nanosheet-FET (NSFET),tensile strained
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