Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array
IEEE Transactions on Electron Devices（2023）
Key words
Phase change materials,Switches,Resistance,Phased arrays,Threshold voltage,Simulation,Phase change memory,Array simulation,cross-point array (XPA),cross-point memory,ovonic threshold switch (OTS),phase-change memory (PCM),Vth variation
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