Numerical Analysis of an Ultralow Switching Loss IGBT with an Inner Primary Blocking Junction
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
Key words
Insulated gate bipolar transistors,Junctions,Voltage,Logic gates,Switching loss,Electromagnetic interference,Transistors,Electric field (E-field),electromagnetic interference (EMI) noise,insulated gate bipolar transistor (IGBT),turn-off loss,turn-on loss
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined