Analysis of Single-Event Upsets and Transients in 22 Nm Fully Depleted Silicon-On-Insulator Logic
IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2023）
关键词
Inverters,Threshold voltage,Radiation effects,Clocks,Transient analysis,Single event upsets,Shift registers,Back-gate bias,conventional well,cross sections,flip-flops,fully depleted,heavy ions,radiation effects,silicon-on-insulator (SOI),single-event transient (SET),single-event upset (SEU)
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