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Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

Taras Ravsher,Daniele Garbin,Andrea Fantini,Robin Degraeve,Sergiu Clima,Gabriele Luca Donadio,Shreya Kundu,Hubert Hody,Wouter Devulder,Jan Van Houdt,Valeri Afanas'ev,Romain Delhougne,Gouri Sankar Kar

IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）

Cited 14|Views75
Key words
Amorphous chalcogenides,ovonic threshold switch (OTS),polarity effect,self-selective memory,SiGeAsSe
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