Highly Scaled GaN Complementary Technology on a Silicon Substrate
IEEE Transactions on Electron Devices（2023）
关键词
Logic gates,Epitaxial growth,Silicon,Substrates,Plasmas,FinFETs,Switches,Complementary,FinFET,GaN,GaN-on-Si,n-FET,p-channel field effect transistor (p-FET),scaling,self-aligned (SA),transistor
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